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Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

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2 Author(s)
Gutierrezā€Aitken, A.L. ; Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 ; Bhattacharya, P.K.

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We have measured electron and hole impact ionization coefficients in biaxially strained InxGa1-xAs/InyAl1-yAs (0.44≤x≤0.62, 0.44≤y≤0.62) multiquantum wells for the first time. It is seen that β/α is enhanced due to strain‐induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band‐to‐band impact ionization and band‐edge discontinuity impact ionization processes.

Published in:

Journal of Applied Physics  (Volume:73 ,  Issue: 10 )

Date of Publication:

May 1993

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