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Single‐crystal Cu has been ion implanted with C to fluences of 1×1018/cm2 followed by laser annealing with nanosecond pulses from an excimer laser and subsequently etched in dilute nitric acid. Raman spectroscopy, Rutherford backscattering, and electron microscopy have been used to identify the distribution and morphology of the carbon at different stages of sample processing. Polycrystalline graphite and amorphous carbon films are typically produced over a wide range of processing conditions; well‐ordered graphite can be formed as well. Small Cu crystallites are seen in areas where the etch lifted the C films off the substrate. However, extensive analysis by Raman spectroscopy and electron microscopy provides no evidence for the formation of the diamond phase of carbon.