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Electronic properties in Ga‐doped CdTe layers grown by metalorganic vapor phase epitaxy

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5 Author(s)
Ekawa, M. ; Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan ; Yasuda, Kazuhito ; Ferid, Touati ; Saji, Manabu
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Electronic properties in Ga‐doped (100) CdTe layers on (100) GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy were studied. Triethylgallium was used as a dopant source. The source materials were dimethylcadmium (DMCd) and diethyltelluride (DETe). The effects of the DETe/DMCd (VI/II) ratio on the electrical properties were evaluated by Hall measurements. Electron concentration (300 K) was controlled from 3.5×1014 cm-3 to 2.5×1016 cm-3 by the VI/II ratio in the range 0.5 to 2. Higher growth temperature lowered the electron concentration. High electron mobility of 630 cm2/V s (300 K) was obtained for a growth temperature of 375 °C and a VI/II ratio of 2. Good correspondence was observed between electrical and photoluminescence (PL) properties. Both intensity and linewidth of a neutral‐donor bound‐exciton (D0,X) emission at 1.5932 eV increased with the electron concentration. The ionization energy of the Ga donor was estimated to be about 18 meV from electrical and PL properties. A Ga incorporation mechanism was deduced on the basis of the experimental results.  

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Journal of Applied Physics  (Volume:72 ,  Issue: 8 )