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Posthydrogenation of low‐pressure chemical‐vapor‐deposited amorphous silicon using a novel internal lamp system and its application to thin‐film transistor fabrication

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Posthydrogenation of a‐Si produced by low‐pressure chemical‐vapor deposition was investigated using an internal lamp which can dissociate hydrogen molecules directly. After hydrogenation, the photo–to–dark‐current ratio was increased to greater than 4.5×104. The hydrogen in the hydrogenated films was mainly bonded as Si‐H, and the penetration depth was about 300 nm. The posthydrogenated thin‐film transistor had about 7 orders on/off current ratio and its electron and hole mobilities were 0.1 and 0.01 cm2/V s, respectively.

Published in:

Journal of Applied Physics  (Volume:72 ,  Issue: 7 )