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This paper introduces the inflow moments method as a general procedure for the derivation of interface or boundary conditions for advanced models of carrier transport in semiconductor devices. It is based on a general interface condition for the Boltzmann equation accounting for particle and energy balance at material interfaces, as metal‐semiconductor contacts or semiconductor heterojunctions. Interface conditions for transport models based on integrations of the Boltzmann equation are consistently derived by the corresponding integrations of the Boltzmann interface condition. The method is illustrated by a treatment of thermionic emission of hot electrons at a semiconductor heterojunction, resulting in interface conditions for the particle as well as the energy balance equation.