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We report on the experimental studies of an interband tunneling effect between GaSb valence‐band and InAs conduction‐band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple‐barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction‐band and the valence‐band quasi‐bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak‐current density on the InAs well width.