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Epitaxial lutetium silicide: Growth, characterization and electrical properties

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6 Author(s)
Travlos, A. ; Institute of Materials Science, National Research Center, ‘‘Democritos,’’ GR‐153 10 Ag. Paraskevi, Athens, Greece ; Aloupogiannis, P. ; Rokofyllou, E. ; Papastaikoudis, C.
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The growth of lutetium silicide layers on 〈100〉 and 〈111〉Si is studied by random and channeling Rutherford backscattering spectrometry, x‐ray diffractometry, and scanning electron microscopy. The LuSi2-x layers grow epitaxially with a better crystallinity on 〈100〉Si than on 〈111〉Si by vacuum annealing at 400 °C. Silicidation of Lu layers proceeds via nonuniform spatial diffusion of silicon atoms leading to a columnar growth of the silicide layer. Resistivity measurements in the temperature range 4.6–300 K show that LuSi2-x layers are metallic.

Published in:

Journal of Applied Physics  (Volume:72 ,  Issue: 3 )