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Radiation‐induced hole trapping in reoxidized nitrided silicon dioxide (RNO) was studied with electron spin resonance spectroscopy. It is demonstrated that the dominant hole trap in RNO is not the well known E’ center of conventional oxides. This finding confirms our earlier speculation, based on detrapping experiments, that the dominant hole trap in RNO is a species distinctly different from that in conventional oxide.
Published in:
Journal of Applied Physics
(Volume:72
,
Issue:
2
)
Date of Publication: Jul 1992
- Page(s):
- 820 - 821
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.351823
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 July 2009
- Issue Date :
- Jul 1992
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