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Initial crystallization stage of amorphous germanium films

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4 Author(s)
Edelman, F. ; Department of Materials Engineering, Technion‐Israel Institute of Technology, Haifa 32000, Israel ; Komem, Y. ; Bendayan, M. ; Beserman, R.

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The incubation time for the crystallization of amorphous Ge (a‐Ge) films was studied as a function of temperature between 150 and 500 °C by means of both in situ transmission electron microscopy and Raman scattering spectroscopy. The temperature dependence of the incubation time for free‐sustained a‐Ge films follows an Arrhenius curve with an overall (nucleation+growth) crystallization process activation energy of 2.0 eV. In the case where the a‐Ge films were on Si3N4 substrates, an earlier stage of the crystallization was observed (nucleation), having an activation energy of 1.3 eV. In addition, it was found that a thin metallic layer of Al or Au, deposited on the a‐Ge films, induces a very fast crystallization in the mode of dendritic growth, as reflected by a low activation energy (0.9 eV) for the incubation time temperature dependence.

Published in:

Journal of Applied Physics  (Volume:72 ,  Issue: 11 )

Date of Publication:

Dec 1992

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