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Ion radiation induced diffusion of Xe implanted into a polymer film

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4 Author(s)
Kaschny, J.R. ; Instituto de Física, Universidade Federal do Rio Grande do Sul, 91500 Porto Alegre, RS, Brasil ; Amaral, L. ; Behar, M. ; Fink, D.

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In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post‐bombarded the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition, the implantation fluences, as well as the ion species used in the bombardment, were changed. The results show that the radiation induced diffusion process undergoes a trapping‐detrapping mechanism. The trapping probability is proportional to the implanted fluence, and the detrapping one depends on the kind of ion used in the bombarding experiment. Finally, it is shown that the nuclear energy transfer plays an important role in the radiation induced diffusion mechanism.

Published in:

Journal of Applied Physics  (Volume:72 ,  Issue: 11 )

Date of Publication:

Dec 1992

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