By Topic

Effects of BF2+ implants on titanium silicide formation by rapid thermal annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Choi, J.S. ; Department of Materials Engineering, Hanyang University, Seoul 133‐791, Korea ; Hwang, Y.S. ; Paek, S.H. ; Oh, J.E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.352136 

The formation of titanium silicides on Si implanted with different BF2+ dosages has been studied by secondary ion mass spectrometry and transmission electron microscopy measurements. The thickness of the silicide layer formed in the temperature ranging from 600 to 800 °C has been investigated as a function of the implanted BF2+ dosage up to 1×1016 cm-2. Annealing at 700 °C results in conversion of the titanium film into predominantly C49 TiSi2, and most of it is transformed into the C54 phase at 800 °C or higher, resulting in a lower sheet resistance (16 μΩ cm). The titanium silicide thickness formed after the rapid thermal annealing (RTA) treatment depends on the implanted BF2+ dosage, caused by the native oxide enhanced by increased damage. Boron is redistributed into the silicide layer up to the solid solubility limit during annealing, leading to an accumulation at the silicide/silicon interface. The lowest contact resistance (with a size of 0.7 μm×0.7 μm) of 35 Ω is obtained at the annealing temperature of 700 °C.

Published in:

Journal of Applied Physics  (Volume:72 ,  Issue: 1 )