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Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories

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5 Author(s)
Papadas, C. ; Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG/INPG, 23 rue des martyrs, B.P. 257, 38016 Grenoble, France ; Ghibaudo, G. ; Pananakakis, G. ; Riva, C.
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The impact of the oxide reliability on the endurance performance of nonvolatile memories [electrically erasable read only memories (EEPROMs)] is analyzed quantitatively. The degradation rate of tunnel SiO2 layers as obtained from EEPROM cells as well as tunnel oxide capacitors subjected to different modes of electrical stress (write/erase operations, static and dynamic stress) are compared and attributed to a specific charge generation mechanism. Furthermore, a reliability criterion for the optimization of the tunnel oxide technology entering the fabrication of EEPROM cells is also proposed.

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 9 )

Date of Publication:

May 1992

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