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Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques

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5 Author(s)
Pamulapati, J. ; Center for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 ; Bhattacharya, P. ; Tober, R.L. ; Loehr, J.P.
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Reflectance and photoluminescence spectroscopy have been used to study the optical properties of high quality InxGa1-xAs/GaAs (0.13≤x≤0.30) single quantum wells. The results show strong agreement with the theoretical model used taking into account the strain potential. The agreement of the theoretical model, though, deviates from the experimental results for large values of excess strain in the well. For the case of the large strain (x=0.30) the reflectance indicates the strain in the well is hydrostatic rather than biaxial. The relevance of this fact is discussed in relation to device performance.

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 9 )

Date of Publication:

May 1992

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