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Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum

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9 Author(s)
Kim, Kun Ho ; Department of Physics, Gyeongsang National University, Chinju 660‐701, Korea ; Lee, Jeoung Ju ; Seo, Dong Ju ; Choi, Chi Kyu
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The growth of Ti and the formation of epitaxial Ti silicide on Si(111)‐7×7 were investigated by using reflection high‐energy electron diffraction (RHEED) and high‐resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky–Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer–Weber type when the substrate temperature is ∼550 °C. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi2 is grown epitaxially on a Si substrate when 160 ML of Ti is deposited on a Si(111)‐7×7 surface at RT followed by in situ annealing at 750 °C for 10 min in ultrahigh vacuum (UHV). The TiSi2/Si interface is somewhat incoherent, but the developed TiSi2 crystallites are single crystal with matching face relationships of TiSi2(111)‖Si(111), TiSi2(311)‖Si(111), and TiSi2(022)‖Si(111). A thin single‐crystal Si overlayer with [111] direction is grown on the TiSi2 surface when TiSi2/Si(111) is annealed at ∼900 °C in UHV, which is confirmed by observing the Si(111)‐7×7 RHEED pattern.

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 8 )

Date of Publication:

Apr 1992

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