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Room‐temperature hydrogenation effect on Si‐ and Be‐ion‐implanted GaAs

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4 Author(s)
Cho, Hoon Young ; Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130‐650, Korea ; Kim, Eun Kyu ; Lee, Ho Sub ; Min, Suk‐Ki

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Hydrogenation effects on Si‐ and Be‐ion‐implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep‐level transient spectroscopy and optical deep‐level transient spectroscopy, it was observed that the electron and hole traps at Ec-0.62‐ and Ev+0.68‐eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room‐temperature hydrogenation. This effect persists during the anneal at 400 °C during 5 min in an argon ambient.  

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 4 )