By Topic

Room‐temperature hydrogenation effect on Si‐ and Be‐ion‐implanted GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cho, Hoon Young ; Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130‐650, Korea ; Kim, Eun Kyu ; Lee, Ho Sub ; Min, Suk‐Ki

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Hydrogenation effects on Si‐ and Be‐ion‐implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep‐level transient spectroscopy and optical deep‐level transient spectroscopy, it was observed that the electron and hole traps at Ec-0.62‐ and Ev+0.68‐eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room‐temperature hydrogenation. This effect persists during the anneal at 400 °C during 5 min in an argon ambient.  

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 4 )