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Plasmas used for processing of microelectronics materials are often powered by radio‐frequency (rf) electrical sources. Such plasmas have nonlinear impedance characteristics which cause the plasma state to depend on the nature of the circuitry that supplies electrical power to the plasma. This dependency occurs because the harmonics of the fundamental drive frequency, which are generated by the plasma nonlinearity, interact with the impedance of the external circuitry at the harmonic frequencies. This report describes the successful use of an rf filter in the power feed to the plasma which isolates the plasma electrically and eliminates its sensitivity to changes in the rf generator, cable plant, and matching network.