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High‐speed 1.3‐μm InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine

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8 Author(s)
Huang, Rong‐Ting ; Rockwell International Corporation, Microelectronics Technology Center, Compound Semiconductor Products, Newbury Park, California 91320 ; Keo, S. ; Cheng, W.H. ; Wolf, D.
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Fe‐doped semi‐insulating InP layers grown by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine have been used as a current block layer for high‐speed 1.3‐μm InGaAsP buried crescent lasers. The performance characteristics of such lasers are comparable to those of lasers with a PH3‐grown Fe‐doped semi‐insulating InP current blocking layer over a measurement temperature range of 25 to 85 °C. A 3‐dB modulation bandwidth of 17.5 GHz has been obtained at room temperature and a cw bias current of 100 mA.

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 2 )