By Topic

Thermal stability of NiSi2 on high‐dose ion‐implanted (001) Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chen, W.J. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Chen, L.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.351350 

Thermal stability of polycrystalline NiSi2 on high‐dose BF+2‐, Si+‐, B+‐, F+‐, As+‐, and P+‐implanted (001) Si has been studied by both cross‐sectional and plan‐view transmission electron microscopy as well as by sheet resistance measurements. The surface coverage and grain size of polycrystalline NiSi2 were found to be significantly influenced by the implantation species in silicon substrate. In Si+‐, B+‐, As+‐, and P+‐implanted samples, agglomeration of NiSi2 became very severe after 800 °C, 1‐h annealing. The average grain sizes were larger than 0.5 μm. In contrast, almost full surface coverage was found in F+‐ and BF+2‐implanted samples after 900 °C, 1‐h annealing. The growth of laterally uniform NiSi2 and resistance to agglomeration at high temperatures in BF+2‐ and F+‐implanted samples are attributed to the retardation of the growth of NiSi2 grains by the presence of fluorine bubbles at the grain boundaries. Sheet resistance data were found to correlate well with the morphological and microstructural observation.

Published in:

Journal of Applied Physics  (Volume:71 ,  Issue: 2 )