Cart (Loading....) | Create Account
Close category search window

The effects of deposition rate on the structural and electrical properties of ZnO:Al films deposited on (112¯0) oriented sapphire substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Igasaki, Yasuhiro ; Research Institute of Electronics, Shizuoka University, Johoku 3‐5‐1, Hamamatsu 432, Japan ; Saito, Hiromi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Aluminum doped zinc oxide (ZnO:Al) films were deposited on (112¯0) oriented sapphire substrates heated to 200 °C with a radio‐frequency (rf) power ranging from 25 to 170 W for a deposition rate in the range 0.7–27.4 nm min-1 by rf‐magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt. %. All of the films deposited were (0001) oriented single‐crystalline films with an internal stress. The stress was increased and degraded the crystallinity of the epitaxial film as a deposition rate was increased, and thus the Hall mobility and the resistivity of the film were, respectively, decreased and increased. However, the resistivities obtained were in the range about 1.4–3.0×10-4 Ω cm, the values comparable to those for indium tin oxide film presently used as a transparent electrode.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 7 )

Date of Publication:

Oct 1991

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.