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The effects of deposition rate on the structural and electrical properties of ZnO:Al films deposited on (112¯0) oriented sapphire substrates

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2 Author(s)
Igasaki, Yasuhiro ; Research Institute of Electronics, Shizuoka University, Johoku 3‐5‐1, Hamamatsu 432, Japan ; Saito, Hiromi

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Aluminum doped zinc oxide (ZnO:Al) films were deposited on (112¯0) oriented sapphire substrates heated to 200 °C with a radio‐frequency (rf) power ranging from 25 to 170 W for a deposition rate in the range 0.7–27.4 nm min-1 by rf‐magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt. %. All of the films deposited were (0001) oriented single‐crystalline films with an internal stress. The stress was increased and degraded the crystallinity of the epitaxial film as a deposition rate was increased, and thus the Hall mobility and the resistivity of the film were, respectively, decreased and increased. However, the resistivities obtained were in the range about 1.4–3.0×10-4 Ω cm, the values comparable to those for indium tin oxide film presently used as a transparent electrode.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 7 )

Date of Publication:

Oct 1991

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