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Electron microscopic studies and the electrical properties of Pt contacts on n‐type Si annealed by conventional furnace and rapid thermal annealing (RTA) were investigated with scanning electron microscopy, transmission electron microscopy, x‐ray analysis, capacitance‐voltage, and deep‐level transient spectroscopy measurements. An incomplete reaction between Pt and Si is observed after furnace annealing at 550 °C due to the presence of oxygen in the ambient. An almost complete reaction between Pt and Si is achieved after silicidation by RTA at 550 °C. An acceptorlike level located 0.11 eV below the conduction‐band edge with a concentration of 2×1013 cm-3 is detected only after furnace annealing at 550 °C. Silicidation by RTA at 550 °C does not introduce traps in the Si band gap.