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D‐line luminescence at the photon energies of 0.81 and 0.87 eV in Czochralski silicon containing extended dislocation loops has been characterized. In samples containing a high‐oxygen concentration and in tin‐doped samples, the D‐line luminescence was observed. In contrast, no D‐line luminescence was detected in samples containing a low‐oxygen concentration, except when the sample was deliberately contaminated with Cu. The results clearly indicate that the optical centers responsible for the D‐line luminescence are associated with an interaction between the dislocations and impurities. It is hypothesized that the optical centers responsible for the D1 line at 0.81 eV could be associated with an interaction between the edge dislocation component of the dislocation loop and impurities, while the D2 line at 0.87 eV could be produced as a result of an interaction between the screw dislocation component and impurities.