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Positron beam defect profiling of silicon epitaxial layers

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4 Author(s)
Schut, H. ; Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands ; van Veen, A. ; van de Walle, G.F.A. ; Gorkum, A.A.van

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Epitaxial layers of silicon grown on a Si(100) substrate by molecular‐beam epitaxy (MBE) and solid‐phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open‐volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 6 )

Date of Publication:

Sep 1991

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