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0.4–3.0‐MeV‐range Be‐ion implantations into InP:Fe

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4 Author(s)
Nadella, Ravi K. ; Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 ; Rao, M.V. ; Simons, David S. ; Chi, Peter H.

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High‐energy (MeV) Be implants in the energy range 0.4–3.0 MeV and dose range 2×1013–6×1014 cm-2 were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2×1014 cm-2. The first four moments of the Be implant depth distributions were calculated from the secondary‐ion‐mass spectrometry (SIMS) data on the as‐implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 °C/15‐s RTA on the 2‐MeV/2×1014‐cm-2 Be implant. In contrast to Be‐implanted samples, no in‐diffusion of Be was observed in Be/P‐coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8Rp and 0.9Rp (range) were observed in the SIMS depth profiles.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 6 )

Date of Publication:

Sep 1991

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