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Inhibition of atomic hydrogen etching of Si(111) by boron doping

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3 Author(s)
Chen, P. J. ; Surface Science Center, Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 ; Colaianni, M. L. ; Yates, J. T.

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Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron‐modified Si(111)‐(√3×√3)‐R30° surface was studied using temperature programmed desorption (TPD), high‐resolution electron energy‐loss spectroscopy (HREELS), and low‐energy electron diffraction. In comparison to the Si(111)‐(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)‐(7×7) surface.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 6 )

Date of Publication:

Sep 1991

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