Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.349320
Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron‐modified Si(111)‐(√3×√3)‐R30° surface was studied using temperature programmed desorption (TPD), high‐resolution electron energy‐loss spectroscopy (HREELS), and low‐energy electron diffraction. In comparison to the Si(111)‐(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)‐(7×7) surface.