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Simulating electron flow in the applied‐B diode

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2 Author(s)
Krall, Nicholas A. ; Krall Associates, Del Mar, California 92014 ; Rosenthal, Stephen E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.349410 

Electron flow in and into an applied‐B ion diode is calculated, including the effects of turbulence produced by streaming instabilities. A technique is developed for including these effects in a numerical simulation. The results of two‐dimensional simulations using this technique in the electromagnetic particle‐in‐cell code magic are presented.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 5 )