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InGaAs‐GaAs‐AlGaAs strained‐layer laser with heavy silicon doping

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5 Author(s)
Sin, Y.K. ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695‐7911 ; Hsieh, K.Y. ; Lee, J.H. ; Hwang, Y.
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Photoluminescence characteristics of uniformly silicon‐ and beryllium‐doped pseudomorphic InGaAs‐GaAs‐AlGaAs single‐ and multiple‐quantum‐well heterostructures grown by molecular‐beam epitaxy are studied. Red shifts in the photoluminescence peaks are obtained from uniformly silicon‐doped single‐quantum‐well samples with respect to undoped samples. Uniformly beryllium‐doped InGaAs‐GaAs multiple quantum wells totally intermix during materials growth. Also, the effect on laser performance (laser thresholds and emission spectra) by silicon doping is demonstrated with an InGaAs‐GaAs‐AlGaAs strained‐layer laser (grown by molecular‐beam epitaxy) with a heavily silicon‐doped quantum well. The low laser threshold, kink in light versus current, shift in emission wavelength, and two emission peaks are observed, and these characteristics are believed to be due to heavy silicon doping.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 2 )