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Annealing behavior of Ga and Ge antisite defects in neutron‐transmutation‐doped semi‐insulating GaAs

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3 Author(s)
Kuriyama, K. ; College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan ; Yokoyama, K. ; Tomizawa, K.

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The evaluation of GaAs and GeAs antisite defects in neutron‐transmutation‐doped semi‐insulating GaAs was studied by the photoluminescence measurements at temperatures ranging from 15 to 80 K. The annealing behavior of both the GeAs acceptors and the band‐edge distortion, induced by the neutron irradiation, plays an important role in the detection of GaAs double acceptors. The 200‐meV level of the GaAs double acceptor cannot be observed unless the 30‐meV GeAs and 78‐meV GaAs levels are partially or completely filled with electrons.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 12 )