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Transient behavior of boron diffusion coefficient in silicon in oxidizing ambient and extrinsic conditions: Influence of point defect recombination

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1 Author(s)
Tsoukalas, Dimitris ; Institute of Microelectronics, NCSR ’Democritos’, 15310 Aghia Paraskevi, Athens, Greece

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We present experimental results that show the variation of the diffusion coefficient of boron in silicon as a function of the oxidation time in extrinsic conditions. A model is then developed that explains quite satisfactorily this experimentally detected dependence. The model assumes that recombination between self‐interstitials and vacancies takes place reducing their number and consequently their contribution to the diffusion of boron. Our results show that this method can fit experimental data using only the interstitialcy diffusion component as a parameter. The best fitting is obtained when fI equals 0.4.

Published in:

Journal of Applied Physics  (Volume:70 ,  Issue: 12 )