By Topic

Effects of photochemical vapor deposition phosphorus‐nitride interfacial layer on electrical characteristics of Au‐InP Schottky diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yoon-Ha Jeong ; Department of Electronic and Electrical Engineering, Pohang Institute of Science and Technology, POSTECH, P. O. Box 125 Pohang, 790‐330, Korea ; Kim, Geon‐Tae ; Kim, Seok‐Tae ; Kim, Kwang‐Il
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus‐nitride(P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au‐Schottky diode formed using the in situ processes has a 50‐Å P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 × 10-8 Å/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin‐film/InP interface was investigated using x‐ray photoelectron spectroscopy.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 9 )