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Effects of photochemical vapor deposition phosphorus‐nitride interfacial layer on electrical characteristics of Au‐InP Schottky diodes

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5 Author(s)
Yoon-Ha Jeong ; Department of Electronic and Electrical Engineering, Pohang Institute of Science and Technology, POSTECH, P. O. Box 125 Pohang, 790‐330, Korea ; Kim, Geon‐Tae ; Kim, Seok‐Tae ; Kim, Kwang‐Il
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The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus‐nitride(P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au‐Schottky diode formed using the in situ processes has a 50‐Å P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 × 10-8 Å/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin‐film/InP interface was investigated using x‐ray photoelectron spectroscopy.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 9 )