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Microstructure and physical properties of Mn‐Zn ferrites for high‐frequency power supplies

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5 Author(s)
Otsuki, E. ; Sendai Research Laboratories, Tokin Corporation, Sendai, Japan ; Yamada, S. ; Otsuka, T. ; Shoji, K.
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The power loss of Mn‐Zn ferrites and its dependency on the microstructural factors have been investigated. The power loss was found to be lowered due to the formation of a high‐electrical‐resistive boundary layers, which is accomplished by an addition of specific refractory oxides, which are concentrated on the grain boundary and form a boundary layer with CaO. The new material, having a low power loss at high frequency (∼1 MHz), has been developed with the HfO2 addition.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 8 )