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Nonintrusive wafer temperature measurement using in situ ellipsometry

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3 Author(s)
Kroesen, G.M.W. ; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 ; Oehrlein, G.S. ; Bestwick, T.D.

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It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 5 )

Date of Publication:

Mar 1991

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