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Comparison of the effects of post‐oxidation anneals on the initial properties and the radiation response of rapid thermally processed oxides

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1 Author(s)
Schubert, W.K. ; Sandia National Laboratories, Albuquerque, New Mexico

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The effects of post‐oxidation processing on the initial performance (as measured here by pre‐irradiation fixed‐charge and interface‐state densities) and radiation response of rapid thermally processed, metal‐oxide‐semiconductor (MOS) capacitors are investigated. The processing dependencies for the major groups of processing‐ and radiation‐induced defects are discussed with respect to recent gains in understanding of the Si‐SiO2 interfacial structure. Processing conditions for ideal initial properties are found to be quite different than those required for optimum radiation response. Guidelines for optimal post‐oxidation thermal processing are given, taking into consideration both the initial performance and radiation response of the MOS device. The results indicate that even when using rapid thermal processing, post‐gate oxide anneals above 900 °C degrade the radiation tolerance.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 5 )