By Topic

Test structure for determining the charge distribution in the oxide of MOS structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Y. Takahashi ; Coll. of Sci. & Technol., Nihon Univ., Funabashi, Japan ; S. Imaki ; K. Ohnishi ; M. Yoshikawa

We propose a measurement method to obtain the charge distribution in the oxide layer of a MOS structure. We obtain various oxide thicknesses by gradually varying the etching time of the oxide layer (slanted etching). Using this method, we have determined the charge distribution in the oxide layer of MOS structures before and after ammonia annealing by measuring the mid-gap voltages of C-V curves

Published in:

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Date of Conference:

22-25 Mar 1995