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Screened potential of a charged dislocation in piezoelectric semiconductors

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1 Author(s)
Shintani, K. ; The University of Electro‐Communications, Chofu, Tokyo 182, Japan

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A simplified model is proposed for analyzing the electric potential around a charged dislocation in piezoelectric semiconductors. In the analysis of the order of the Debye length, the solution for the piezoelectric potential screened by the carriers and ionized impurities is obtained. Consideration of the electrostatic potential field near the dislocation complete the determination of the solution. Numerical calculations of the potential are made for GaAs.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 12 )