By Topic

Fourier transform infrared attenuated total reflection spectra of ion‐implanted silica glasses

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Hosono, Hideo ; Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso‐cho, Show‐ku, Nagoya 466, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Fourier transform infrared attenuated total reflection spectra of silica glasses implanted with Si or P were measured using a Ge as an internal reflection element. Calculated penetration depth of the infrared radiation is 0.2–1.0 μm depending on the wavelength. These values are comparable to the depths of ions implanted at conventional acceleration voltages. Upon implantation the frequencies of ω4(LO) and ω4(TO) shifted to lower energy, whereas ω3 moved to higher energy. This opposite direction of the frequency shift was explained by a decrease in the Si‐O‐Si bridging angle, which is caused by ion‐bombarded compaction. The magnitude of frequency shifts observed were much larger than that in thermally compacted silica glasses reported so far, showing that an extremely high fictive temperature state is realized in the implanted silica glass layers.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 12 )