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The influence of the indium incorporation rate on the lasing wavelength of InGaAs lasers grown by molecular beam epitaxy

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3 Author(s)
Mariella, R.P., Jr. ; Lawrence Livermore National Laboratory, P.O. Box 808, MS L‐228, Livermore, California 94550 ; Lehew, S. ; Guthreau, W.

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Lasing wavelengths have been measured from 871 to 966 nm for a series of graded‐index separate‐confinement‐heterostucture lasers with single InGaAs strained‐layer quantum wells which were grown by molecular beam epitaxy (MBE). These wavelength data are compared to the corresponding indium fluxes in order to determine the incorporation rate of indium as a function of the substrate temperature during the growths. Kinetic models based on a simple sticking coefficient or based on the Law of Mass Action can fit these data for MBE growth with substrate temperatures of 570 or 625 °C.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 11 )