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Fluorocarbon impurities in KrF lasers

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4 Author(s)
Hwang, Helen H. ; University of Illinois, Department of Electrical and Computer Engineering, 1406 W. Green Street, Urbana, Illinois 61801 ; James, Kristopher ; Hui, Roger ; Kushner, M.J.

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Fluorocarbon impurities are known to have deleterious effects on the operation of excimer lasers; however, the sensitivity limits are poorly known. Absorption at 248.9 nm in an e‐beam‐pumped KrF laser has been attributed to CF2, produced by plasma fragmentation of precursor molecules such as CF4. In this paper, the effects of CF4 impurities on the gain of an electron‐beam‐excited KrF laser are investigated theoretically. It is found that the density of KrF(B) significantly decreases and absorption increases when the CF4 concentration exceeds 0.03%. The decrease in the density of KrF(B) is dominantly the result of the interception of precursors to forming the upper laser level, as opposed to direct quenching.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 11 )