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Temperature control of silicon‐germanium alloy epitaxial growth on silicon substrates by infrared transmission

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3 Author(s)
Sturm, J.C. ; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ; Garone, P.M. ; Schwartz, P.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.347705 

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon‐germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon‐germanium alloy layers have negligible absorption at 1.3 and 1.55 μm over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

Published in:

Journal of Applied Physics  (Volume:69 ,  Issue: 1 )

Date of Publication:

Jan 1991

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