Cart (Loading....) | Create Account
Close category search window

Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hassan, J. ; Department of Physics, Chemistry and Biology, Linköping University of Technology, SE-581 83 Linköping, Sweden ; Bergman, J.P.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The influence of structural defects on carrier lifetime in 4H-SiC epilayers has been studied using high spatial resolution optically detected lifetime measurements. Full wafers mappings with 200 μm spatial resolution revealed the carrier lifetime variations that can be associated with structural defects replicated from the substrate and variations in the epitaxial growth conditions due to the susceptor design. High resolution mappings over smaller regions with lateral step size down to 20 μm, revealed local carrier lifetime reductions associated with different structural defects in the epitaxial layers. Identified defects that influence the carrier lifetime are the carrot defects and different types of in-grown stacking faults. Also clusters of threading screw dislocations in the epilayer probably originating from the dissociation of micropipe in the substrate are found to effectively reduce the carrier lifetime. Furthermore, optically detected lifetime mapping has been demonstrated as a nondestructive technique which allows nonvisible structural defects to be detected in as-grown epilayers.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 12 )

Date of Publication:

Jun 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.