Referenced Items are not available for this document.
Fully integrated dual-band power amplifiers with on-chip baluns for 802.11 n MIMO WLAN applications are presented. With a 3.3 v supply, the PAs produce a saturated output power of 28.3 dBm and 26.7 dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25 dB is achieved at 22.4 dBm for the 2.4 GHz band and 20.5dBm for the 5 GHz band while transmitting 54 Mbs OFDM. The chip is fabricated in standard 65 nm CMOS and the PAs occupy 0.31 mm2 (2.4 G) and 0.27 mm2 (5G) area.
Published in:
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Date of Conference: 7-9 June 2009
- Page(s):
- 365 - 368
- ISSN :
- 1529-2517
- E-ISBN :
- 978-1-4244-3378-0
- Print ISBN:
- 978-1-4244-3377-3
- INSPEC Accession Number:
- 10748502
- Conference Location :
- Boston, MA
- Digital Object Identifier :
- 10.1109/RFIC.2009.5135559
- Product Type:
- Conference Publications
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