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Rapid thermal annealing effect on amorphous hydrocarbon film deposited by CH4/Ar dielectric barrier discharge plasma on Si wafer: Surface morphology and chemical evaluation

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3 Author(s)
Majumdar, Abhijit ; Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald, Germany ; Bhattacharayya, S.R. ; Hippler, Rainer

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The effects of rapid thermal annealing (RTA) on amorphous hydrogenated carbon-coated film on Si wafer, deposited by CH4/Ar dielectric barrier discharge plasma (at half of the atmospheric pressure), was examined. Bubbles-like structures were formed on the surface of the deposited carbon-coated film. The surface morphology studied by scanning electron microscopy (SEM), which showed that the effect of RTA on the film changing the morphological property drastically at 600 °C and most of the bubbles started evaporating above 200 °C. The inbuilt energy dispersive x-ray in SEM gives the quantitative analysis of the annealed surface. X-ray photoelectron spectroscopy results of the as-deposited films agree with the IR results in that the percent of SiCH3, Si–O–Si and C–O(H) stretching vibrational band in the film. Most of these bands disappeared as the sample was annealed at 600 °C in Ar medium.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 9 )

Date of Publication:

May 2009

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