By Topic

Nanoscale capacitance spectroscopy characterization of AlGaN/GaN heterostructure by current-sensing atomic force microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zeng, Huizhong ; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China ; Sun, Haoming ; Luo, Wenbo ; Wen Huang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3109209 

A current-sensing atomic force microscopy was set up to measure the nanoscale capacitance spectroscopy of the two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructures. The variation in the contact radius of the probe, which is important for the quantitative characterization of 2DEG, was experimentally determined by monitoring the resistive variation of the probe-sample contact and theoretically studied by numerical calculation. The current-sensing method is able to detect the change in Schottky barriers of the probe-sample contact, which affects the measurement of the threshold voltage of 2DEG. By fitting the nanoscale capacitance spectroscopy with numerical calculations, the concentration of 2DEG was quantitatively characterized. The result was comparable with that of macroscopic measurements.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 9 )