Cart (Loading....) | Create Account
Close category search window
 

Highly selective electroplated nickel mask for lithium niobate dry etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Benchabane, S. ; Institut FEMTO-ST, Université de Franche-Comté, CNRS, ENSMM, UTBM, 32 Avenue de l’Observatoire, F-25044 Besançon Cedex, France ; Robert, L. ; Rauch, Jean-Yves ; Khelif, Abdelkrim
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3125315 

A sulfur hexafluoride based reactive ion etching process allowing to etch several micron deep holes with diameters of the order of a few microns in lithium niobate is reported. Etching of deep structures with aspect ratios up to 1.5 was made possible through the use of an electroplated nickel mask exhibiting a selectivity as high as 20 with respect to lithium niobate. Several crystallograpic orientations were investigated, although particular interest was paid to Y-axis oriented substrates. Photoresist as well as metal masks were also tested and their selectivity was compared. The influence of process parameters such as applied rf power or operating pressure on the sidewall slope angle of the etched patterns was investigated. The technique has been successfully applied to the fabrication of phononic crystals consisting of periodical arrays of 9 μm diameter, 10 μm deep holes, with a 10 μm period, and presenting sidewall angles as high as 73° etched in Y-axis oriented lithium niobate.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 9 )

Date of Publication:

May 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.