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Local mapping of interface traps in HfSiO/Si structure by scanning capacitance microscopy using dV/dC signal

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2 Author(s)
Kuge, Shingo ; Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji 671-2280, Japan ; Yoshida, Haruhiko

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3122597 

Scanning capacitance microscopy (SCM) using a dV/dC signal has been proposed for local mapping of interface traps in an insulator/semiconductor structure. In conventional SCM measurements using a dC/dV signal, it is difficult to accurately analyze the spatial distribution of interface traps from the obtained SCM images because the dC/dV signal is inversely proportional to the interface trap density. In the proposed technique, however, the spatial distribution of the interface traps can be characterized using the dV/dC signal, which is directly proportional to the interface trap density. The effectiveness of the proposed technique has been demonstrated by characterizing the spatial distributions of the interface traps in HfSiO/Si structures before and after H2 annealing. The dV/dC images obtained reveal that the spatial variation in the interface trap density is reduced by H2 annealing. Consequently, SCM measurements using a dV/dC signal have been verified to effectively characterize the spatial distribution of interface traps.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 9 )

Date of Publication:

May 2009

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