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Monte Carlo simulation of hot electron energy growth in a layered optimization scheme of ZnS thin film

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6 Author(s)
Xu, Zheng ; Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China ; Zhao, Suling ; He, Qingfang ; Ji, Guorui
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We carried out Monte Carlo simulation and clarified the variation in electron energy in layered optimized electroluminescent ZnS with high electric field. We found that the following: (1) 8 eV is necessary for the energy of primary electrons entering the luminescent layer with an electric field of 4 MV/cm in order to enhance the excitation of luminescence. (2) The distributions of both the density of states and the hot electron energy concentrate and shift to the high energy end when the electric field increases; thus most of the hot electrons are effective in the excitation of luminescence. (3) The average energy of hot electrons is found to reach a second plateau in a stepwise manner along the increase in electric field corresponding to the second jump in electroluminescence in a layered optimization scheme.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 8 )