Cart (Loading....) | Create Account
Close category search window

Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Pecz, B. ; Research Institute for Technical Physics and Materials Science, H-1525 Budapest, P.O. Box 49, Hungary ; Stoemenos, J. ; Voelskow, M. ; Skorupa, W.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

High quality 3C-SiC nanocrystallites were epitaxially formed on (100) Si wafers covered by a 150 nm thick SiO2 capping layer after low dose carbon implantation and high temperature annealing in CO atmosphere. Carbon implantation is used to introduce nucleation sites by forming silicon-carbon clusters at the SiO2/Si interface acting as nucleation sites for the growth of 3C-SiC nanocrystallites. The formation of the nucleation clusters as well as the morphology, the size, and the density of the nanocrystals were systematically studied by conventional and high resolution transmission electron microscopy. The nanocrystallites were developed following two different modes of growth: The first develops facets along the <100> crystallographic direction giving tetragonal grains and the second facets along the <110> direction resulting in elongated nanocrystallites. The formation mechanism of the nanocrystallites and the strain related with them are also discussed.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 8 )

Date of Publication:

Apr 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.