Cart (Loading....) | Create Account
Close category search window

Analytical strain relaxation model for Si1-xGex/Si epitaxial layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Menendez, Jose ; Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

Your organization might have access to this article on the publisher's site. To check, click on this link: 

An approximate but accurate analytical solution is presented for the system of differential equations used by Houghton to model kinetically limited strain relaxation in Si1-xGex alloys layers growing on Si substrates [J. Appl. Phys. 70, 2136 (1991)]. This solution makes it much easier to compare the relaxation model with experimental data. The analytical results are used to refit the Houghton model parameter n0 (representing the initial heterogeneous density of dislocation sources) to published relaxation data, including post-1991 experimental work. The fits, which include experiments in which the growth temperature ranged from 450 to 750 °C, show considerable scattering in n0, but suggests that n0 increases as the growth temperature is lowered. Since this trend was not apparent in the original Houghton work, a detailed analysis is carried out for samples grown and annealed at temperatures below 450 °C. For this purpose, the Houghton model is extended to include the reduction in effective stress as the strain relaxation advances as well as the effect of dislocation pinning. The analysis confirms that n0 increases as the growth temperature is lowered. Possible physical reasons are discussed, and an empirical fit to the temperature dependence of n0 is used to generate revised predictions of apparent critical thicknesses.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 6 )

Date of Publication:

Mar 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.