By Topic

Enhanced pyroelectric coefficient of antiferroelectric-ferroelectric bilayer thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Corkovic, S. ; Department of Materials, Cranfield University, Bedfordshire MK43 0AL, United Kingdom ; Zhang, Q.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this study, the pyroelectric coefficient and the figure of merit (FOM) of the ferroelectric (FE) PbZr0.3Ti0.7O3 (PZT 30/70) thin films were found to be greatly enhanced by introducing a thin antiferroelectric (AF) PbZr0.95Ti0.05O3 (PZT 95/05) layer underneath the FE film and thus creating a bilayer structure on platinized silicon substrates. The film properties were investigated as a function of the FE layer thickness when the thickness of AF layer remained unchanged. The highest pyroelectric coefficient of 1 μm thick PZT 30/70 film was 3.18×10-4 cm-2K-1. However, the highest pyroelectric coefficient for 1 μm thick bilayer film was 3.5×10-4 or 2.5×10-4 cm-2K-1 for only 280 nm thick bilayer film. The enhancement of pyroelectric coefficient suggests switching of AF into FE phase during poling and following stabilization of FE phase at room temperature. The reduction in dielectric constant in bilayer films after poling, compared to pure PZT 30/70, showed a FOM of 2.94×10-5 Pa-0.5, which is the double of the FOM for pure PZT 30/70 films of similar thickness (1.45×10-5 Pa-0.5).

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 6 )