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Electrical tuning of intersubband transition in a semiconductor quantum ring

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3 Author(s)
Bhattacharyya, S. ; Asansol Engineering College, Vivekananda Sarani, Kanyapur, Asansol, West Bengal 713 305, India ; Das, N.R. ; Sen, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3087480 

In this paper, the intersubband transition energy in an n-type semiconductor quantum ring has been investigated in the presence of an electric field perpendicular to the plane of the ring. The analysis has been done considering the effect of band nonparabolicity of the semiconductor. The results show that at high electric field energy varies nonlinearly with field and the optical transition between the two lowest quantized subbands can be controlled by the electric field. It has also been shown how this fine wavelength tuning by electric field depends on the band gap of the semiconductor.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 5 )

Date of Publication:

Mar 2009

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