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Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy

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6 Author(s)
Metcalfe, G.D. ; U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRD-ARL-SE-EM, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA ; Readinger, Eric D. ; Hongen Shen ; Woodward, N.T.
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We present the Stark energy sublevels of Nd3+ ions in GaN grown by plasma-assisted molecular beam epitaxy as determined by luminescence spectra. We correlate the photoluminescence spectra with transitions from the 4F3/2 excited state to the 4I9/2, 4I11/2, and 4I13/2 multiplets of the Nd3+ ion for above and below bandgap excitation, with the strongest emission occurring at 1.12 eV (1106 nm). We determine a splitting of the 4F3/2 excited state to be 4.1 meV. From photoluminescence excitation spectra, we also identify the Stark sublevels of the upper states 4F5/2, 2H9/2, 4F7/2, 4S3/2, 2G7/2, and 4G5/2. Photoluminescence excitation spectra reveal an optimal excitation energy of 1.48 eV (836 nm). Site-selective spectroscopy studies using combined excitation-emission spectroscopy with confocal microscopy indicate enhanced substantial doping at the Ga site.

Published in:

Journal of Applied Physics  (Volume:105 ,  Issue: 5 )